Skip to main content
Infineon Technologies IPA60R160P7XKSA1 — Discrete Semiconductors

Infineon IPA60R160P7XKSA1 CoolMOS P7 N-Ch 600V 20A MOSFET

MPNIPA60R160P7XKSA1
Active

Infineon CoolMOS™ P7 N-Channel MOSFET, IPA60R160P7XKSA1, 600 V, 20 A, 160 mOhm, PG-TO220 Full Pack, Through Hole.

$3.8000Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesCoolMOS™ P7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA60R160P7XKSA1 specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation26W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 350µA
Rds on (Max) @ id, vgs160mOhm @ 6.3A, 10V
Gate charge (Qg) (Max) @ vgs31 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1317 pF @ 400 V

Product details

Package and thermal integration

The IPA60R160P7XKSA1: Rated for 26 W power dissipation at the case, the junction-to-case thermal path limits the continuous current in a real enclosure — a 20 A load at 160 mOhm dissipates 64 W in conduction alone, so practical operation at full current requires duty-cycling or a lower Rds(on) target. Operating junction temperature spans -55 to 150 °C, covering industrial and automotive under-hood environments where ambient temperatures reach 105 °C and the die sees additional self-heating.

The CoolMOS™ P7 series is Infineon's mainstream high-voltage MOSFET platform, balancing Rds(on) and switching losses for power supplies, adapters, and lighting ballasts.

Frequently asked questions

Does the TO-220 Full Pack package need an insulating pad?

No — the PG-TO220 Full Pack has an isolated tab, so it mounts directly to a heatsink without a mica washer or thermal pad, simplifying assembly and reducing thermal resistance.