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Infineon Technologies IPA60R160P6XKSA1 — Discrete Semiconductors

Infineon IPA60R160P6XKSA1 CoolMOS P6 N-Ch 600V 23.8A

MPNIPA60R160P6XKSA1
Active

Infineon CoolMOS™ P6 series, IPA60R160P6XKSA1, N-channel MOSFET, 600V Vdss, 23.8A Id, 160mOhm Rds(on) at 9A, 10V, 44nC Qg, TO-220-3 Full Pack, -55°C to 150°C.

$3.7200Ref. price · indicative, final on quote
Infineon Technologies IPA60R160P6XKSA1 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesCoolMOS™ P6
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA60R160P6XKSA1 specifications
ParameterValue
SeriesCoolMOS™ P6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C23.8A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 750µA
Rds on (Max) @ id, vgs160mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs44 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2080 pF @ 100 V

Product details

The IPA60R160P6XKSA1: With a total gate charge of 44 nC at 10 V, this MOSFET requires a gate driver capable of sourcing and sinking that charge at the target switching frequency.

Package advantage: isolated tab

This simplifies assembly and improves thermal coupling — the tab is at the same potential as the drain, but the full-pack moulding isolates it electrically.

Input capacitance is 2080 pF at 100 V drain-source.

The base product number is IPA60R, covering the CoolMOS P6 family in the TO-220 Full Pack variant.

Frequently asked questions

Is the IPA60R160P6XKSA1 RoHS compliant?

Yes, it is ROHS3 compliant.