IPA60R160P6

Infineon Technologies

Infineon CoolMOS™ IPA60R160P6, N-Channel MOSFET, 600 V Vdss, 160 mOhm Rds(on) at 9 A, 23.8 A Id, TO-220-3 Full Pack, PG-TO220-3-111, Through Hole, -55°C to 150°C.

Infineon Technologies IPA60R160P6
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[IN STOCK] In Stock: 25 pcs
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Technical specifications

IPA60R160P6 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C23.8A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 750µA
Rds on (Max) @ id, vgs160mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs44 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2080 pF @ 100 V

Technical details

The 600 V drain-source voltage rating gives you the blocking margin for universal-input AC-DC converters (85–265 VAC) with a reasonable derating for line transients. Total gate charge is 44 nC at 10 V, which sets the gate-drive current requirement and switching loss in a 50–100 kHz switching stage. Input capacitance is 2080 pF at 100 V drain-source — a moderate figure that keeps the driver burden reasonable for a 600 V part in this current class.

Thermal and package — the Full Pack matters for heatsinking

Maximum power dissipation is 34 W at case temperature, so a proper heatsink is required above a few watts of continuous dissipation. The through-hole mounting suits point-to-point wiring or PCB layouts where vibration resistance and serviceability are priorities.

IPA60R160P6
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