Infineon CoolMOS™ N-Channel MOSFET, 600 V drain-source, 125 mOhm Rds(on) at 14.5 A / 10 V, 30 A continuous drain, TO-220-3 Full Pack (PG-TO220-FP), -55 to 150 °C junction.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 30A (Tc) |
| Power dissipation | 34W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.5V @ 960µA |
| Rds on (Max) @ id, vgs | 125mOhm @ 14.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 96 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2127 pF @ 100 V |
With a typical gate charge of 96 nC at 10 V and input capacitance of 2127 pF at 100 V drain-source, the IPA60R125C6XKSA1 needs a gate driver capable of sourcing and sinking a few amperes peak to keep switching edges clean. The 34 W package power limit at case temperature means the thermal design — heatsink size, airflow, switching frequency — must be checked against the application losses, not just the headline current rating.
Maximum on-resistance is 125 mOhm at 14.5 A drain current with 10 V gate drive.