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Infineon Technologies IPA60R120C7XKSA1 — Discrete Semiconductors

Infineon IPA60R120C7XKSA1 CoolMOS C7 N-Ch 600V 11A MOSFET

MPNIPA60R120C7XKSA1
Active

Infineon CoolMOS™ C7 series, N-Channel MOSFET, 600 V drain-source, 11 A continuous drain, 120 mOhm Rds(on) at 10 V, 34 nC gate charge, TO-220-3 Full Pack (PG-TO220-FP), -55 to 150 °C junction temperature.

$4.7700Ref. price · indicative, final on quote
Infineon Technologies IPA60R120C7XKSA1 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesCoolMOS™ C7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA60R120C7XKSA1 specifications
ParameterValue
SeriesCoolMOS™ C7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation32W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 390µA
Rds on (Max) @ id, vgs120mOhm @ 7.8A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1500 pF @ 400 V

Product details

600 V, 120 mOhm — the switching-loss sweet spot in CoolMOS C7

Full-Pack TO-220: no insulator, no washer

The PG-TO220-FP (full-pack) package is the through-hole, fully isolated variant of the standard TO-220. The exposed metal tab is encapsulated in the moulding compound, so the part can be bolted directly to a grounded heatsink without a sil-pad or mica washer. This simplifies the mechanical assembly and improves the thermal contact — the junction-to-case thermal resistance is specified at 32 W maximum dissipation. The trade-off is a slightly higher thermal resistance than a standard TO-220 with a good insulator, but for many industrial and appliance PSU designs the assembly time savings win.

The part is ROHS3 compliant.

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