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Infineon Technologies IPA60R099P7XKSA1 — Discrete Semiconductors

Infineon IPA60R099P7XKSA1 CoolMOS P7 N-Ch MOSFET, 600V

MPNIPA60R099P7XKSA1
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Infineon CoolMOS™ P7 series, N-Channel MOSFET, 600 V drain-source voltage, 99 mOhm on-resistance at 10 V gate drive, 31 A continuous drain current, through-hole PG-TO220-FP package, -55°C to 150°C junction temperature range.

$4.1500Ref. price · indicative, final on quote
Infineon Technologies IPA60R099P7XKSA1 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA60R099P7XKSA1 specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C31A (Tc)
Power dissipation29W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 530µA
Rds on (Max) @ id, vgs99mOhm @ 10.5A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1952 pF @ 400 V

Product details

The IPA60R099P7XKSA1: The TO-220 Full Pack isolates the back tab, simplifying heatsink mounting without an insulating pad.

Gate drive and switching — 45 nC total gate charge

Gate charge is 45 nC at 10 V. Input capacitance is 1952 pF at 400 V drain bias. Gate threshold maximum is 4 V at 530 µA.

Thermal and operating environment

The 29 W maximum power dissipation in the TO-220 Full Pack package assumes adequate heatsinking — the plastic full-pack body has higher thermal resistance than a standard TO-220, so the thermal pad area and airflow are design parameters, not afterthoughts.

Frequently asked questions

What is the Rds(on) of IPA60R099P7XKSA1?

At lower gate voltages the Rds(on) increases significantly — the 10 V drive voltage is specified for achieving the rated value.