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Infineon Technologies IPA60R099P6XKSA1 — Discrete Semiconductors

Infineon IPA60R099P6XKSA1 CoolMOS P6 N-Ch 600V 99mOhm MOSFET

MPNIPA60R099P6XKSA1
Active

Infineon CoolMOS™ P6 series, N-Channel MOSFET, 600 V drain-source, 99 mOhm Rds(on) at 10 V gate drive, 37.9 A continuous drain current, TO-220 Full Pack through-hole package, -55°C to 150°C junction temperature.

$6.2600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA60R099P6XKSA1 specifications
ParameterValue
SeriesCoolMOS™ P6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C37.9A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 1.21mA
Rds on (Max) @ id, vgs99mOhm @ 14.5A, 10V
Gate charge (Qg) (Max) @ vgs70 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3330 pF @ 100 V

Product details

99 mOhm Rds(on) and 70 nC gate charge — switching loss trade-off

TO-220 Full Pack — mounting and thermal management

The PG-TO220-FP (Full Pack) package has a fully isolated plastic body — the metal tab is not electrically connected to the drain, so no mica washer or sil-pad is required for heatsink mounting. This simplifies assembly and reduces thermal resistance compared to adding an insulator. The through-hole mounting suits point-of-load power stages and offline converters where a single-sided PCB with a bolt-on heatsink is the mechanical design.

Active production — sourcing and lifecycle

For volume production or long-term supply agreements, a formal quote through our desk locks in allocation and lead-time terms.

Frequently asked questions

What is the maximum drain current of IPA60R099P6XKSA1?

The maximum continuous drain current is 37.9 A at 25°C case temperature, derated by the 34 W package power dissipation limit.