500 V N-channel MOSFET in CoolMOS CE — parametric summary
The IPA50R800CEXKSA2: Maximum on-resistance is 800 mOhm at Vgs = 13 V and Id = 1.5 A, placing this device in the medium-Rds(on) band of the 500 V CoolMOS portfolio — suited for auxiliary supplies, flyback converters, and PFC stages where switching losses dominate over conduction losses.
Package, mounting, and thermal budget
Gate-source voltage is limited to ±20 V absolute maximum; the recommended drive voltage for achieving the rated Rds(on) is 13 V, with a threshold voltage of 3.5 V maximum at Id = 130 µA.
Lifecycle and compliance status
The part is ROHS3 compliant.
