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Infineon Technologies IPA50R800CEXKSA2 — Discrete Semiconductors

Infineon IPA50R800CEXKSA2 CoolMOS CE N-Ch 500V 4.1A TO-220

MPNIPA50R800CEXKSA2
Active

Infineon Technologies CoolMOS™ CE series, N-Channel MOSFET, 500 Vdss, 4.1 A continuous drain, 800 mOhm Rds(on), TO-220-3 Full Pack, Through Hole, Tube.

$0.9400Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesCoolMOS™ CE
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA50R800CEXKSA2 specifications
ParameterValue
SeriesCoolMOS™ CE
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)13V
Current - continuous drain (Id) @ 25°C4.1A (Tc)
Power dissipation26.4W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 130µA
Rds on (Max) @ id, vgs800mOhm @ 1.5A, 13V
Gate charge (Qg) (Max) @ vgs12.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds280 pF @ 100 V

Product details

500 V N-channel MOSFET in CoolMOS CE — parametric summary

The IPA50R800CEXKSA2: Maximum on-resistance is 800 mOhm at Vgs = 13 V and Id = 1.5 A, placing this device in the medium-Rds(on) band of the 500 V CoolMOS portfolio — suited for auxiliary supplies, flyback converters, and PFC stages where switching losses dominate over conduction losses.

Package, mounting, and thermal budget

Gate-source voltage is limited to ±20 V absolute maximum; the recommended drive voltage for achieving the rated Rds(on) is 13 V, with a threshold voltage of 3.5 V maximum at Id = 130 µA.

Lifecycle and compliance status

The part is ROHS3 compliant.

Frequently asked questions

What compliance documentation does Infineon provide for the IPA50R800CEXKSA2?

The part is ROHS3 compliant per Infineon's lifecycle record. Standard documentation includes the datasheet, RoHS declaration, and REACH compliance information available through the supply chain.