Infineon CoolMOS™ IPA50R350CP, N-channel MOSFET, 500 V Vdss, 10 A Id, 350 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, through-hole, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 32W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.5V @ 370µA |
| Rds on (Max) @ id, vgs | 350mOhm @ 5.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 25 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1020 pF @ 100 V |
Input capacitance is 1020 pF at 100 V drain-source, a moderate figure that limits the Miller plateau duration without requiring a high-current gate driver.
Maximum power dissipation is 32 W at the case — the Full Pack's junction-to-case thermal path is the constraint, so a heatsink with good thermal interface is expected for any load above a few watts.
This is the worst-case value for conduction loss calculations.
The IPA50R350CP has a lower on-resistance (350 mOhm vs 850 mOhm typical for IRF840) and a fully isolated TO-220 Full Pack package, so it can drop into a 500 V flyback with a gate drive of 10 V. Verify the gate threshold (3.5 V max at 370 µA) and the pinout match your PCB layout before substituting.