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Infineon Technologies IPA50R280CEXKSA2 — Discrete Semiconductors
Infineon Technologies

Infineon IPA50R280CEXKSA2 CoolMOS CE N-Ch 500V 7.5A

MPNIPA50R280CEXKSA2
Active

Infineon Technologies CoolMOS™ CE series, N-Channel MOSFET, 500 V Vdss, 7.5 A Id, 280 mOhm Rds(on), TO-220-3 Full Pack, Through Hole, Tube.

$1.5100Ref. price · indicative, final on quote
IPA50R280CEXKSA2 datasheet
PackagingTO-220-3 Full Pack
StockContact for availability
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPA50R280CEXKSA2 Technical Specifications
ParameterValue
SeriesCoolMOS™ CE
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)13V
Current - continuous drain (Id) @ 25°C7.5A (Tc)
Power dissipation30.4W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 350µA
Rds on (Max) @ id, vgs280mOhm @ 4.2A, 13V
Gate charge (Qg) (Max) @ vgs32.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds773 pF @ 100 V

Product details

Gate drive and switching parasitics

The IPA50R280CEXKSA2: Gate charge totals 32.6 nC at 10 V — low enough that many PWM controllers drive it directly without a buffer stage, though the ±20 V Vgs max leaves headroom for gate-drive overshoot on a 15 V rail. Input capacitance measures 773 pF at 100 V drain bias, which combined with the gate charge defines the turn-on delay and crossover loss at switching frequencies up to ~100 kHz in hard-switched topologies.

Thermal and package constraints for board integration

The junction temperature range spans -40°C to 150°C, covering industrial ambient conditions with margin for self-heating in a ventilated enclosure.

Frequently asked questions

Will the IPA50R280CEXKSA2 drop in as a replacement for the IMZA65R027M1HXKSA1?

No — the IMZA65R027M1HXKSA1 is a 650 V CoolSiC MOSFET in a different package (TO-247) with a 34 mOhm Rds(on) and a 59 A current rating. The IPA50R280CEXKSA2 is a 500 V silicon CoolMOS device in a TO-220 Full Pack. The voltage class, package footprint, and gate-drive voltage (13 V vs 18 V) are incompatible without a board spin and recharacterization.