150V N-channel in a fully isolated TO-220
The IPA105N15N3GXKSA1 is an N-channel MOSFET in the TO-220 Full Pack (PG-TO220-FP) package, rated 150V Vdss and 37A Id with 10.5 mOhm max on-resistance at 10V gate drive.
Total gate charge is 55 nC at 10V gate drive. The 4300 pF input capacitance at 75V drain bias is moderate. The specified drive voltage range of 8V to 10V for rated Rds(on) means a 5V microcontroller output cannot fully enhance this device — a gate driver or level-shift stage is required.
Thermal limits and heatsink planning
Maximum junction temperature is 175°C, with power dissipation rated at 40.5W at case temperature. At 37A continuous current, conduction loss alone (I² × Rds(on)) at 25°C junction is about 14.4W — within the 40.5W ceiling, but junction temperature will rise above 25°C, increasing Rds(on) by roughly 50% at 125°C junction. A heatsink is needed for sustained 37A operation; the TO-220 Full Pack's thermal resistance junction-to-case is higher than a standard TO-220 because the plastic overmold adds a thermal barrier.
ROHS3 compliant. The base product number is IPA105; the suffix identifies the TO-220 Full Pack variant.