Infineon OptiMOS™ series, N-Channel MOSFET, 60 V drain-source, 9.3 mOhm Rds(on) at 40 A, 10 V gate drive, 43 A continuous drain, TO-220-3 Full Pack, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 43A (Tc) |
| Power dissipation | 33W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 34µA |
| Rds on (Max) @ id, vgs | 9.3mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 48 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3900 pF @ 30 V |
This saves assembly time and reduces thermal resistance path length, though the 33 W power dissipation ceiling at case temperature means the designer should verify the junction temperature stays within the -55°C to 175°C range under worst-case load. The through-hole mounting suits point-of-load regulators and motor-drive boards where vibration resistance and manual rework are priorities.
Infineon does not list a direct successor order code in the available records. For a new design, the procurement team should cross-reference the OptiMOS family for a 60 V, 9 mOhm-class N-channel MOSFET in a TO-220 Full Pack with an active lifecycle status. A parametric search on drain-source voltage, Rds(on), and package will yield the closest active alternative.