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Infineon Technologies IPA086N10N3GXKSA1 — Discrete Semiconductors

Infineon IPA086N10N3GXKSA1 N-Ch MOSFET, 100V 45A TO-220FP

MPNIPA086N10N3GXKSA1
Active

Infineon Technologies OptiMOS™ N-Channel MOSFET, 100 V Vdss, 45 A continuous drain, 8.6 mOhm Rds(on), TO-220 Full Pack (PG-TO220-FP), -55°C to 175°C junction temperature.

$1.8400Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA086N10N3GXKSA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C45A (Tc)
Power dissipation37.5W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 75µA
Rds on (Max) @ id, vgs8.6mOhm @ 45A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3980 pF @ 50 V

Product details

Active production — stable BOM line item

The IPA086N10N3GXKSA1: BOM planners can treat this as a design-in stable line item for new builds and sustaining production alike.

100 V, 45 A, 8.6 mOhm — switching and conduction loss profile

These numbers drive the gate driver's peak current and switching loss budget: a 100 kHz hard-switched application drawing 55 nC per cycle needs an average gate drive current of 5.5 mA plus the crossover loss from the Miller plateau.

TO-220 Full Pack — isolated mounting, no insulating washer

The PG-TO220-FP (Full Pack) package encapsulates the backside tab in moulding compound, so the heatsink interface is electrically isolated. No insulating pad or shoulder washer is needed — the device mounts directly to a grounded chassis or heatsink, saving assembly time and thermal interface material cost. The through-hole leads suit wave-solder or hand-solder assembly.

The junction temperature range spans -55°C to 175°C, which covers MIL-STD-883 Class B and most avionics, downhole, and engine-bay profiles. The 175°C absolute maximum junction temperature is the hard ceiling for thermal runaway protection — the 37.5 W dissipation limit at case temperature must be derated above 25°C per the datasheet's thermal impedance curve.

Gate drive: 6 V minimum for rated Rds(on)

The drive voltage range is 6 V to 10 V for the rated on-resistance. Designs using a 5 V gate rail should budget for increased conduction loss or step up to 10 V via a gate driver with bootstrap or charge-pump output.