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Infineon Technologies IPA083N10N5XKSA1 — Discrete Semiconductors

Infineon IPA083N10N5XKSA1 N-Channel MOSFET

MPNIPA083N10N5XKSA1
Active

Infineon OptiMOS series, N-Channel MOSFET, 100 V drain-source, 44 A continuous drain, 8.3 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, Through Hole, -55°C to 175°C.

$2.3200Ref. price · indicative, final on quote
Infineon Technologies IPA083N10N5XKSA1 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA083N10N5XKSA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C44A (Tc)
Power dissipation36W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.8V @ 49µA
Rds on (Max) @ id, vgs8.3mOhm @ 44A, 10V
Gate charge (Qg) (Max) @ vgs37 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2730 pF @ 50 V

Product details

What this 100V N-channel OptiMOS brings to the board

The Infineon IPA083N10N5XKSA1 is a 100 V, 44 A N-channel MOSFET from the OptiMOS series, housed in a TO-220 Full Pack (PG-TO220-FP) through-hole package. The Full Pack isolates the tab — no insulating pad needed, which simplifies mounting and keeps the thermal path predictable. The 36 W maximum dissipation at the case (Tc) is the thermal budget; derate from there based on your heatsink and ambient.

No last-time-buy or end-of-life notice on this line.

Frequently asked questions

Where can I buy IPA083N10N5XKSA1?

This part is available to order through independent distribution. Submit an RFQ for current pricing and delivery — availability is confirmed at quote time.

Is IPA083N10N5XKSA1 ROHS compliant?

Yes, it is ROHS3 compliant.