100 V, 46 A, 8.2 mOhm — the switching load this N-channel handles
The IPA082N10NF2SXKSA1 is an N-channel MOSFET from Infineon's StrongIRFET™ 2 trench family, rated 100 V drain-to-source and 46 A continuous drain current at 25 °C case temperature. The 8.2 mOhm max on-resistance at 30 A, 10 V gate drive defines the conduction loss floor — at 46 A the I²R loss is roughly 17 W, which the 35 W power dissipation budget of the TO-220 Full Pack must sink through the case to a heatsink. The gate drive threshold is 3.8 V max at 46 µA drain current, but the datasheet specifies 10 V for the rated Rds(on) — a 5 V logic-level gate drive will not fully enhance the channel, leaving the FET in the linear region and burning excess power. Drive voltage range is 6 V to 10 V for best on-resistance.
175 °C junction — thermal budget in a full-pack isolated tab
Operating junction temperature spans -55 °C to 175 °C, which is the full industrial-plus band. The TO-220 Full Pack (PG-TO220 Full Pack) has an isolated metal tab — no insulating pad or washer needed between the tab and the heatsink, simplifying assembly and reducing thermal resistance in the mounting stack. Gate charge is 42 nC at 10 V, and input capacitance is 2000 pF at 50 V Vds. For a switching application at 100 kHz, the gate driver must source roughly 4.2 mA average to charge the gate — a standard totem-pole driver handles this, but the peak current during the Miller plateau determines the switching edge speed. The 42 nC Qg also sets the switching loss component in the total dissipation budget.
Active production, ROHS3 — no lifecycle surprise for new BOMs
The TO-220 Full Pack through-hole package is a standard footprint — the PG-TO220 Full Pack outline matches the industry TO-220FP mechanical drawing. No special reflow profile or moisture sensitivity level applies; the tube packaging is the standard shipping medium for through-hole devices.