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Infineon Technologies IPA075N15N3 — Discrete Semiconductors

Infineon IPA075N15N3 N-Channel MOSFET, 150V 43A TO-220FP

MPNIPA075N15N3
Active

Infineon OptiMOS™3 N-Channel Power MOSFET, IPA075N15N3, 150V Vdss, 43A Id, 7.5mOhm Rds(on), TO-220-3 Full Pack, PG-TO220-3-111, Through Hole.

$3.9700Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSNot applicable
SeriesOptiMOS™3
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA075N15N3 specifications
ParameterValue
SeriesOptiMOS™3
FET typeN-Channel
MountingThrough Hole
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)8V, 10V
Current - continuous drain (Id) @ 25°C43A (Tc)
Power dissipation39W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 270µA
Rds on (Max) @ id, vgs7.5mOhm @ 43A, 10V
Gate charge (Qg) (Max) @ vgs93 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7280 pF @ 75 V

Product details

150 V, 43 A, 7.5 mOhm — the TO-220 Full Pack power switch

The IPA075N15N3: The TO-220 Full Pack (PG-TO220-3-111) package has a fully isolated metal tab — no insulating pad or washer needed between the device and the heatsink. This simplifies assembly and improves thermal transfer reliability in through-hole designs.

Gate charge and switching speed

The 7280 pF input capacitance at 75 V Vds contributes to the switching energy; the driver must supply the charge during the Miller plateau. The recommended drive voltage range is 8 V to 10 V for achieving the rated on-resistance. The maximum gate-source voltage is ±20 V, providing margin against ringing on the gate node in hard-switching topologies.

Thermal limits and operating range

The 175°C Tj(max) suits applications with high ambient temperatures — motor drives in enclosures, automotive under-hood electronics, and industrial power supplies where the device sees sustained thermal stress. The threshold voltage is 4 V maximum at 270 µA drain current. This means the device turns on fully with standard 10 V or 12 V gate drive rails, but may not be fully enhanced with 5 V logic-level drive — a gate driver or bootstrap circuit is recommended.

The device is manufactured by Infineon Technologies and is RoHS-compliant per the standard lead-free assembly process. The bulk package (tube) is suitable for through-hole assembly lines and manual prototyping.

Frequently asked questions

What compliance documentation does Infineon provide for the IPA075N15N3?

Infineon provides RoHS compliance data and a material declaration for the IPA075N15N3. The device is manufactured in a lead-free process and is suitable for RoHS-compliant assemblies. REACH and conflict minerals declarations are available from Infineon's product page.