Infineon OptiMOS™3 series, IPA057N08N3G, N-Channel MOSFET, 80 V Vdss, 60 A Id, 5.7 mOhm Rds(on) at 10 V, 69 nC Qg, TO-220-3 Full Pack, -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™3 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 60A (Tc) |
| Power dissipation | 39W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.5V @ 90µA |
| Rds on (Max) @ id, vgs | 5.7mOhm @ 60A, 10V |
| Gate charge (Qg) (Max) @ vgs | 69 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4750 pF @ 40 V |
The PG-TO220-3-111 full-pack package (TO-220 Full Pack) provides electrical isolation between the tab and the heatsink, so no insulating washer or pad is needed. The through-hole mounting suits point-of-load regulators, motor-drive output stages, and industrial power supplies where the board sees vibration.
Maximum on-resistance is 5.7 mOhm at 60 A drain current with 10 V gate drive. Total gate charge is 69 nC at 10 V. These two numbers define the conduction and switching losses in a hard-switched design.