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Infineon Technologies IPA041N04NGXKSA1 — Discrete Semiconductors

Infineon IPA041N04NGXKSA1 N-Channel OptiMOS MOSFET, 40 V

MPNIPA041N04NGXKSA1
Active

Infineon OptiMOS™ N-channel MOSFET, IPA041N04NGXKSA1, 40 V Vdss, 70 A continuous drain, 4.1 mOhm Rds(on) at 10 V, PG-TO220-FP full-pack, -55 to 175 °C.

$1.4000Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA041N04NGXKSA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C70A (Tc)
Power dissipation35W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 45µA
Rds on (Max) @ id, vgs4.1mOhm @ 70A, 10V
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4500 pF @ 20 V

Product details

40 V, 4.1 mOhm — the conduction-loss floor for 12/24 V bus designs

The 4.1 mOhm maximum on-resistance at 70 A, 10 V gate drive sets the conduction-loss floor for high-current switching in 12 V and 24 V bus architectures — motor drives, DC-DC converters, and load switches where every milliohm counts against the thermal budget. The full-pack PG-TO220-FP package isolates the tab electrically — no insulating pad needed, which simplifies heatsink mounting and cuts assembly time in high-vibration environments like industrial pumps or automotive under-hood modules.

Total gate charge is 56 nC at 10 V. Input capacitance Ciss is 4500 pF at 20 V drain-source. This capacitance dominates the turn-on delay; a gate resistor in the 10–22 ohm range typically balances switching speed against ringing on the PCB layout.

Temperature range and thermal management

RoHS3 compliant.

Frequently asked questions

What is the Rds(on) of IPA041N04NGXKSA1?

Maximum on-resistance is 4.1 mOhm at 70 A drain current with 10 V gate drive. This is the worst-case figure at 25 °C junction; actual Rds(on) rises with temperature per the normalised curve in the datasheet.

Can IPA041N04NGXKSA1 be used for 40 V applications?

Yes. The drain-source voltage rating is 40 V, which gives headroom for 12 V and 24 V rails. For a 48 V bus the margin is tight — a 60 V or 80 V part would be the safer choice.

Is IPA041N04NGXKSA1 RoHS compliant?

Yes, it is RoHS3 compliant.