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Infineon Technologies IPA040N08NM5SXKSA1 — Discrete Semiconductors

Infineon IPA040N08NM5SXKSA1 OptiMOS N-Ch 80V 75A TO-220FP

MPNIPA040N08NM5SXKSA1
Active

Infineon OptiMOS™ N-channel MOSFET, IPA040N08NM5SXKSA1, 80 V Vdss, 75 A continuous drain, 4 mOhm Rds(on), TO-220 Full Pack, through-hole, tube.

$2.8600Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA040N08NM5SXKSA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation39W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.8V @ 109µA
Rds on (Max) @ id, vgs4mOhm @ 38A, 10V
Gate charge (Qg) (Max) @ vgs93 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6400 pF @ 40 V

Product details

80 V, 75 A, 4 mOhm — the switching MOSFET for a 48 V or 12 V rail

The IPA040N08NM5SXKSA1 is an N-channel OptiMOS™ power MOSFET from Infineon, rated for 80 V drain-source breakdown and 75 A continuous drain current at 25°C case temperature. The 4 mOhm max on-resistance at 38 A and 10 V gate drive keeps conduction losses low in a 48 V telecom rectifier or a 12 V automotive DC-DC stage. It comes in the TO-220 Full Pack (PG-TO220-FP) — the fully isolated tab means no thermal pad or insulator is needed between the back of the part and the heatsink. That saves assembly time and avoids the extra thermal resistance of a silicone pad.

Switching performance — gate charge and capacitance for the drive budget

Total gate charge is 93 nC at 10 V gate drive. For a 100 kHz hard-switched converter, the average gate-drive current needed is Qg × fsw = 9.3 mA — well within the output capability of a standard driver like the 2EDN or IRS21867. Input capacitance is 6400 pF at 40 V drain-source. This sets the switching energy and the driver's peak current requirement; a 2 A gate driver charges Ciss in about 3.2 ns at the Miller plateau, which keeps cross-conduction short. The drive voltage range is 6 V to 10 V for achieving the rated Rds(on) — 10 V gives the full 4 mOhm, but a 6 V drive still turns the FET on hard enough for most 5 V-logic gate-drive schemes.

Through-hole TO-220 Full Pack — rework and mounting

The TO-220 Full Pack is a through-hole package with a fully moulded plastic back — no exposed metal tab. That means the mounting screw hole is electrically isolated from the drain, so the heatsink can be chassis ground without an insulating washer. Rework is straightforward: the three leads are 0.8 mm thick and the plastic body handles 260°C peak soldering temperature per JEDEC. A standard soldering iron or a hot-air station with a nozzle that covers all three pins will lift the part cleanly without pad damage — just pre-tin the board side and wick the old solder first.

Active production, RoHS3, and sourcing

No stock-holding claim — quoted to order per your BOM quantity.