Infineon OptiMOS IPA040N06NXKSA1, N-Channel MOSFET, 60 V drain-source, 4 mOhm Rds(on) at 69 A, 10 V, 44 nC gate charge, TO-220-3 Full Pack, -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 69A (Tc) |
| Power dissipation | 36W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.3V @ 50µA |
| Rds on (Max) @ id, vgs | 4mOhm @ 69A, 10V |
| Gate charge (Qg) (Max) @ vgs | 44 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3375 pF @ 30 V |
The TO-220 Full Pack (PG-TO220-FP) package has a fully molded back — no exposed metal tab. The 36 W power dissipation ceiling at the case is the thermal budget; with the junction rated to 175 °C, the part can handle sustained high-current switching in a confined enclosure as long as the heatsink keeps the case temperature in check.
The maximum on-resistance is 4 mOhm at a drain current of 69 A and a gate-source voltage of 10 V.
The maximum gate threshold voltage is 3.3 V at a drain current of 50 µA.
The evidence does not explicitly state RoHS compliance, but Infineon's OptiMOS series is generally RoHS-compliant per their standard material declarations. Verify the specific date-code lot if your process requires a formal certificate.