Infineon OptiMOS™5, N-Channel MOSFET, 60 V drain-source, 72 A continuous drain at 25 °C, 4 mOhm Rds(on) at 10 V gate drive, 50 nC gate charge, TO-220 Full Pack, -55 to 175 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™5 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 72A (Tc) |
| Power dissipation | 36W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.3V @ 50µA |
| Rds on (Max) @ id, vgs | 4mOhm @ 72A, 10V |
| Gate charge (Qg) (Max) @ vgs | 50 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3500 pF @ 30 V |
The Infineon IPA040N06NM5SXKSA1 is a 60 V, 72 A N-channel MOSFET from the OptiMOS™5 family, housed in a PG-TO220 Full Pack.
The 36 W maximum power dissipation at the case (Tc) sets the heatsink sizing baseline; the actual dissipation headroom depends on the thermal interface and airflow.
The maximum Rds(on) is 4 mOhm at 72 A drain current and 10 V gate drive, specified at 25 °C junction temperature.
The operating junction temperature range is -55 °C to 175 °C, wider than the common 150 °C limit and suitable for high-temperature environments.
The continuous drain current is rated at 72 A at a case temperature of 25 °C.