80 V, 75 A N-channel in a fully isolated TO-220
The IPA037N08N3GXKSA1: That saves assembly time and improves thermal contact.
Maximum on-resistance is 3.7 mOhm at 75 A with a 10 V gate drive — that is the figure for sizing conduction losses. At 75 A, I²R loss is about 21 W, which is half the 41 W power dissipation limit of the Full Pack package. In practice, the continuous current at elevated ambient will be lower; the package's thermal resistance to the heatsink sets the real ceiling. Gate charge totals 117 nC at 10 V. A driver with at least 2 A peak source/sink keeps the switching edges clean. The threshold voltage is 3.5 V max at 155 µA drain, and the recommended drive voltage range is 6 V to 10 V. A 5 V logic-level gate signal will not fully enhance this FET — you need a 10 V rail or a gate driver that boosts above the threshold.
Temperature range and compliance
The device is marked as Active in production and fully RoHS3 compliant.