Skip to main content
Log in
Infineon Technologies IPA029N06NM5SXKSA1 — Discrete Semiconductors

Infineon IPA029N06NM5SXKSA1 N-Channel MOSFET, 60V 87A TO-220

MPNIPA029N06NM5SXKSA1
Active

Infineon OptiMOS™5 N-Channel MOSFET, IPA029N06NM5SXKSA1, 60V Vdss, 87A Id, 2.9mOhm Rds(on), TO-220-3 Full Pack, Through Hole, Tube.

$2.7700Ref. price · indicative, final on quote
Infineon Technologies IPA029N06NM5SXKSA1 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesOptiMOS™5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA029N06NM5SXKSA1 specifications
ParameterValue
SeriesOptiMOS™5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C87A (Tc)
Power dissipation38W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.3V @ 36µA
Rds on (Max) @ id, vgs2.9mOhm @ 87A, 10V
Gate charge (Qg) (Max) @ vgs74 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5300 pF @ 30 V

Product details

The IPA029N06NM5SXKSA1: These figures define the gate-drive current needed to reach a target switching frequency — a 74 nC gate charge at 100 kHz draws 7.4 mA from the driver, which is within the capability of most standard gate-drive ICs. This makes the part compatible with 5 V logic if the driver can source enough current, but 10 V drive is needed for the lowest Rds(on).

Thermal limits and package integration

Maximum power dissipation is 38 W at the case temperature, and the junction temperature range spans -55 °C to 175 °C.

Frequently asked questions

What package does IPA029N06NM5SXKSA1 come in?

It is supplied in a TO-220-3 Full Pack (PG-TO220 Full Pack), through-hole mount, shipped in tubes.

Is IPA029N06NM5SXKSA1 RoHS compliant?

Yes, it is ROHS3 compliant per the manufacturer's lifecycle record.