Infineon OptiMOS™ IPA028N08N3GXKSA1, N-Channel MOSFET, 80 V Vdss, 89 A continuous drain, 2.8 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 89A (Tc) |
| Power dissipation | 42W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.5V @ 270µA |
| Rds on (Max) @ id, vgs | 2.8mOhm @ 89A, 10V |
| Gate charge (Qg) (Max) @ vgs | 206 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 14200 pF @ 40 V |
The Infineon IPA028N08N3GXKSA1 is an N-channel enhancement-mode MOSFET from the OptiMOS™ family, built on Infineon's trench technology for low conduction and switching losses.
Infineon lists the IPA028N08N3GXKSA1 as obsolete.
Rds(on) is 2.8 mOhm at 10 V gate drive. At 89 A, power dissipation is 42 W at case temperature.
Yes, Infineon lists the IPA028N08N3GXKSA1 as obsolete. It is not in volume production and is not recommended for new designs.
It comes in a TO-220-3 Full Pack (PG-TO220-FP), a through-hole package with an electrically isolated tab — no insulating pad needed for heatsinking.