650 V CoolSiC™ — switching losses and thermal budget
The 74 mOhm maximum on-resistance is specified at 16.7 A with an 18 V gate drive — the recommended drive voltage for minimum Rds(on). Gate charge totals 28 nC at 18 V, and input capacitance measures 930 pF at 400 V drain bias. These numbers place it in the fast-switching tier for a 650 V SiC FET — the driver sees a light capacitive load, which keeps crossover losses low in hard-switched topologies like totem-pole PFC or LLC converters.
Junction temperature and package — the 175°C ceiling
That extra headroom matters in sealed enclosures or high-ambient power stages where the thermal interface is the limiting path. The TO-247-4 package (PG-TO247-4-3) adds a Kelvin source pin — the fourth pin separates the gate-drive return from the power current path, which eliminates the common-source inductance that slows switching in standard three-pin TO-247 parts. Power dissipation is rated at 133 W at case temperature. The through-hole mounting suits bolted heatsink attachment; the large tab area couples well to a thermal pad or direct-contact heatsink.