650 V SiC FET for hard-switched power stages
The Infineon IMZA65R030M1HXKSA1 is a CoolSiC™ N-channel silicon carbide MOSFET in a TO-247-4 through-hole package. It is built for high-efficiency, hard-switched power conversion where the 650 V drain-source rating provides margin on a 400 V DC bus — typical in three-phase motor drives, EV onboard chargers, and industrial power supplies.
Conduction and switching losses at the design point
Rds(on) is specified at 42 mOhm maximum with a 29.5 A drain current and 18 V gate drive — the 18 V drive voltage is the recommended operating point for minimum on-resistance. At 53 A continuous drain current (Tc=25°C), the conduction loss at 42 mOhm is about 118 W, which stays within the 197 W power dissipation limit at the case temperature. Gate charge is 48 nC at 18 V. Input capacitance is 1643 pF at 400 V drain-source.
Thermal headroom and junction rating
The 175°C maximum allows the part to run hot in a sealed enclosure or under-hood environment without derating the current below the 53 A continuous rating — provided the case temperature is managed to keep Tj within limits.