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Infineon Technologies IMZA65R027M1HXKSA1

IMZA65R027M1HXKSA1 CoolSiC™ N-Channel SiC MOSFET, 650 V

MPNIMZA65R027M1HXKSA1
End of Life

Infineon CoolSiC™ series, IMZA65R027M1HXKSA1, N-Channel SiC MOSFET, 650 V drain-source, 34 mOhm Rds(on) at 18 V gate drive, 59 A continuous drain, TO-247-4 through-hole package, -55°C to 150°C junction temperature.

$20.88Ref. price · indicative, final on quote
Infineon Technologies IMZA65R027M1HXKSA1 datasheet (PDF)
PackagingTO-247-4
RoHSROHS3 Compliant
SeriesCoolSiC™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IMZA65R027M1HXKSA1 specifications
ParameterValue
SeriesCoolSiC™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)18V
Current - continuous drain (Id) @ 25°C59A (Tc)
Power dissipation189W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs+23V, -5V
TechnologySiCFET (Silicon Carbide)
CaseTO-247-4
Vgs(th) (Max) @ id5.7V @ 11mA
Rds on (Max) @ id, vgs34mOhm @ 38.3A, 18V
Gate charge (Qg) (Max) @ vgs63 nC @ 18 V
Input capacitance (Ciss) (Max) @ vds2131 pF @ 400 V

Product details

Package and mounting — the TO-247-4 advantage

The TO-247-4 package (supplier device code PG-TO247-4-3) is a through-hole footprint with four pins: gate, Kelvin source, drain, and power source. The Kelvin source pin lets the gate-drive return connect directly to the source sense point inside the package, bypassing the common-source inductance that plagues standard TO-247-3 layouts. For a SiC MOSFET switching at high di/dt, this pin can mean the difference between a clean gate waveform and oscillation. Mounting is standard through-hole on a TO-247 footprint — the fourth pin sits between the gate and the existing source pin, so the PCB layout needs a small adjustment from a three-pin pattern.

It is ROHS3 compliant.

Frequently asked questions

What are equivalent parts for IMZA65R027M1HXKSA1?

The IPD50R950CEAUMA1 is a different class of device — a 500 V CoolMOS™ CE silicon MOSFET in a surface-mount package with 950 mOhm Rds(on) and 4.3 A continuous drain. It is not a functional equivalent for the 650 V, 34 mOhm SiC IMZA65R027M1HXKSA1. For a true SiC equivalent, look at other CoolSiC™ TO-247-4 parts in the same voltage and Rds(on) range.