1200 V SiC FET for high-efficiency power conversion
The IMZA120R020M1HXKSA1: It comes in a through-hole PG-TO247-4-8 package, the four-pin Kelvin-source variant that separates the gate-drive return from the power path for cleaner switching. The SiCFET technology gives you the fast, low-loss body diode of a wide-bandgap device without the reverse-recovery charge of a standard IGBT or superjunction MOSFET — useful in hard-switched bridge legs and totem-pole PFC stages.
On-resistance and gate drive — the numbers that matter
Maximum on-resistance is 26.9 mOhm at 41 A drain current with 18 V gate drive. The drive voltage range for rated Rds(on) is 15 V to 18 V, so plan your gate-drive supply accordingly — 15 V is the minimum to hit the low Rds(on) spec; 18 V is the recommended operating point. Gate charge is 83 nC at 18 V, which keeps gate-drive losses manageable even at high switching frequencies. Input capacitance is 3460 nF at 25 V drain-source — a figure that matters when sizing the gate-drive current for a given rise time.
Thermal and environmental range
Maximum power dissipation is 375 W at case temperature. The TO-247-4 through-hole package bolts directly to a heatsink — no reflow profile, no moisture sensitivity level to track.