650 V SiC MOSFET in a TO-247 — what it brings to the power stage
The IMW65R083M1HXKSA1: It comes in a through-hole TO-247-3 package (PG-TO247-3-41) that handles the 104 W power dissipation without the thermal bottleneck of a surface-mount tab. The maximum Rds(on) is 111 mOhm at 11.2 A drain current with an 18 V gate drive. Gate charge totals 19 nC at 18 V.
At 111 mOhm max, the conduction loss at 11.2 A is within the 104 W package limit. The 19 nC total gate charge at 18 V is sourced by a standard isolated gate driver. Input capacitance Ciss is 624 pF at 400 V drain-source — that is the capacitance the driver charges and discharges each cycle. The low value relative to the 650 V rating is a SiC advantage: the Miller plateau is short, so the switching transition time stays tight even with moderate gate resistance.
Temperature range and mounting — where this part lives
The 175°C junction temperature ceiling provides headroom in a fault condition. Through-hole TO-247-3 with a PG-TO247-3-41 variant — the tab is the drain, and the two source pins are paralleled inside the package to spread the current. The large tab area makes rework straightforward: a hot-air station on the backside while the solder joints melt from the front, no risk of lifting a pad the way a D²PAK can.