650 V SiC trench MOSFET — what the 26 A rating means at operating temperature
The IMW65R072M1HXKSA1: That 26 A is the idealised number — at a realistic 100°C junction the current capability drops, so the design should derate based on the thermal impedance of the heatsink and the switching losses. SiC trench technology gives this part a hard-switching advantage over silicon superjunction MOSFETs in the same voltage class, with lower switching losses and better reverse-recovery behaviour.
ROHS3 compliance is confirmed, which keeps the part clear of the EU RoHS exemptions that expire on some earlier SiC parts.
TO-247 package — thermal and mechanical fit
The part ships in a Tube (the TO-247 package is the standard through-hole, three-lead power package). The large tab area is the drain connection and the primary thermal path — the heatsink interface must be flat and the mounting torque within the datasheet limits to avoid cracking the die attach. The TO-247 footprint is common across Infineon's CoolSiC line, so a board layout for a sibling part should accept this device with no pad changes.