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Infineon Technologies IMW65R057M1HXKSA1
Infineon Technologies

Infineon IMW65R057M1HXKSA1 CoolSiC™ N-Ch SiCFET, 650 V, 35 A

MPNIMW65R057M1HXKSA1
End of Life

Infineon CoolSiC™ series, IMW65R057M1HXKSA1, N-Channel SiCFET, 650 V Vds, 35 A Id, 74 mOhm Rds(on) at 18 V, 28 nC Qg, TO-247-3 through-hole, -55 to 175 °C junction.

$11.68Ref. price · indicative, final on quote
IMW65R057M1HXKSA1 datasheet
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IMW65R057M1HXKSA1 Technical Specifications
ParameterValue
SeriesCoolSiC™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)18V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation133W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs+20V, -2V
TechnologySiCFET (Silicon Carbide)
CaseTO-247-3
Vgs(th) (Max) @ id5.7V @ 5mA
Rds on (Max) @ id, vgs74mOhm @ 16.7A, 18V
Gate charge (Qg) (Max) @ vgs28 nC @ 18 V
Input capacitance (Ciss) (Max) @ vds930 pF @ 400 V

Product details

650 V SiC FET for hard-switched and resonant topologies

The IMW65R057M1HXKSA1: With a maximum Rds(on) of 74 mOhm at 16.7 A and 18 V gate drive, and a gate charge of 28 nC, this part targets high-efficiency power conversion where switching losses dominate — PFC stages, LLC converters, and bidirectional DC-DC stages on a 400 V bus. The junction temperature range extends to 175 °C, giving thermal headroom over typical 150 °C-rated silicon MOSFETs in high-ambient or high-power-density enclosures.

Conduction loss is set by the 74 mOhm maximum on-resistance at 18 V gate drive — this is the figure to use for worst-case thermal design. The 28 nC total gate charge at 18 V means the gate driver sees a moderate capacitive load. Input capacitance is 930 pF at 400 V drain bias, which sets the driver's peak current requirement and the miller plateau duration during hard switching.

Frequently asked questions

What are the Rds(on) and gate charge of IMW65R057M1HXKSA1?

Maximum Rds(on) is 74 mOhm at 16.7 A drain current with 18 V gate drive. Total gate charge is 28 nC at 18 V.

Is IMW65R057M1HXKSA1 suitable for high-frequency switching?

Yes — the 28 nC gate charge and 930 pF input capacitance at 400 V bias are low enough for efficient switching in the 50–200 kHz range with a standard gate driver.