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Infineon Technologies IMW65R048M1HXKSA1

IMW65R048M1HXKSA1 650V N-Ch SiC Trench MOSFET, 39A

MPNIMW65R048M1HXKSA1
End of Life

Infineon CoolSiC IMW65R048M1HXKSA1, 650V N-channel SiC Trench MOSFET, 39A continuous drain current @ 25°C, Tube package, ROHS3 compliant, Active lifecycle.

$18.45Ref. price · indicative, final on quote
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IMW65R048M1HXKSA1 specifications
ParameterValue
Current - continuous drain (Id) @ 25°C39A (Tc)
PackageTube

Product details

Infineon lists the IMW65R048M1HXKSA1 lifecycle stage as current and the product status as Active. For a BOM planner, this removes the obsolescence risk that often shadows older SiC generations.

Sourcing posture for this SiC MOSFET

This is a current-production Infineon part, sourced through our independent distribution channel. The part carries no known second-source cross-reference from other manufacturers; the SiC trench gate structure is Infineon's own CoolSiC technology, so a pin-compatible substitute would need to match the 650 V / 39 A rating and the same TO-247 footprint, which narrows the field considerably.

Frequently asked questions

Where can I buy IMW65R048M1HXKSA1 and get a price?

This part is sourced to order against an RFQ through our independent distribution channel. Submit an RFQ for current availability and pricing — both are confirmed at quote time.

Does IMW65R048M1HXKSA1 have a pin-compatible equivalent from another manufacturer?

No official cross-reference or second-source alternate is listed. The SiC trench structure is Infineon's CoolSiC technology, and any pin-compatible substitute would need to match the 650 V / 39 A rating and the same footprint.