650 V SiC FET in a TO-247 — what it swaps into
The Infineon IMW65R039M1HXKSA1 is a CoolSiC™ N-channel silicon-carbide MOSFET in a through-hole TO-247-3 package. It is rated for 650 V drain-source with a typical on-resistance of 50 mOhm at 25 A and 18 V gate drive. Gate charge is 41 nC at 18 V.
Package and mounting
Rds(on) is specified at 50 mOhm maximum with 25 A drain current and 18 V gate drive — this is the conduction loss floor for the hot loop. At 46 A continuous drain current (Tc=25°C), the package and die can handle the current, but the 176 W power dissipation limit sets the real-world thermal budget. Input capacitance is 1393 pF at 400 V drain-source, which is low for a 650 V SiC FET and keeps the switching losses manageable in hard-switched topologies. The gate threshold voltage is 5.7 V maximum at 7.5 mA drain current, and the recommended drive voltage is 18 V for minimum Rds(on). The gate is rated +20 V / -2 V — the negative limit is tight, so the driver must not overshoot below -2 V during turn-off.
The part is RoHS3 compliant.