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Infineon Technologies IMW65R030M1HXKSA1

Infineon IMW65R030M1HXKSA1 CoolSiC™ SiCFET, 650 V, 58 A

MPNIMW65R030M1HXKSA1
End of Life

Infineon CoolSiC™ IMW65R030M1HXKSA1, N-channel SiCFET, 650 V Vdss, 58 A Id, 42 mOhm Rds(on) @ 18 V, 48 nC Qg, -55 to 175 °C Tj, TO-247-3 through-hole, PG-TO247-3-41.

$22.13592Price · pay online now
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$22.14 / ea

1 in stock — maximum per order · 3–4 days lead time

Infineon Technologies IMW65R030M1HXKSA1 datasheet (PDF)
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesCoolSiC™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

IMW65R030M1HXKSA1 specifications
ParameterValue
SeriesCoolSiC™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)18V
Current - continuous drain (Id) @ 25°C58A (Tc)
Power dissipation197W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs+20V, -2V
TechnologySiCFET (Silicon Carbide)
CaseTO-247-3
Vgs(th) (Max) @ id5.7V @ 8.8mA
Rds on (Max) @ id, vgs42mOhm @ 29.5A, 18V
Gate charge (Qg) (Max) @ vgs48 nC @ 18 V
Input capacitance (Ciss) (Max) @ vds1643 pF @ 400 V

Product details

650 V SiC FET in a TO-247-3 — what it brings to the power stage

The Infineon IMW65R030M1HXKSA1 is a CoolSiC™ N-channel silicon carbide MOSFET rated for 650 V drain-source and 58 A continuous drain current at a 25°C case temperature. It comes in a through-hole TO-247-3 package (Infineon code PG-TO247-3-41), the standard three-lead power package that bolts to a heatsink or chassis.

175°C junction — the SiC thermal advantage

Gate drive and switching — 48 nC Qg at 18 V

The gate charge is 48 nC at an 18 V gate drive, which is the recommended drive voltage for the rated Rds(on). The input capacitance is 1643 pF at 400 V drain-source. The gate-source voltage is rated +20 V / -2 V, so the driver must not exceed that negative rail.

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