650 V SiC FET in a TO-247-3 — what it brings to the power stage
The Infineon IMW65R030M1HXKSA1 is a CoolSiC™ N-channel silicon carbide MOSFET rated for 650 V drain-source and 58 A continuous drain current at a 25°C case temperature. It comes in a through-hole TO-247-3 package (Infineon code PG-TO247-3-41), the standard three-lead power package that bolts to a heatsink or chassis. The 42 mOhm maximum on-resistance at an 18 V gate drive and 29.5 A drain current sets the conduction loss floor for the BOM.
175°C junction — the SiC thermal advantage
The 197 W maximum power dissipation at the case temperature is the thermal budget for the design; the actual dissipation follows from the Rds(on) and the switching losses.
Gate drive and switching — 48 nC Qg at 18 V
The gate charge is 48 nC at an 18 V gate drive, which is the recommended drive voltage for the rated Rds(on). The input capacitance is 1643 pF at 400 V drain-source. The gate-source voltage is rated +20 V / -2 V, so the driver must not exceed that negative rail.