Active SiCFET for high-voltage switching — 1200 V blocking, 4.7 A continuous
The IMW120R350M1HXKSA1: This is a through-hole device in the TO-247-3 package (PG-TO247-3-41), designed for high-voltage power conversion where silicon MOSFETs hit their voltage ceiling. With a maximum on-resistance of 455 mOhm at 2 A and 18 V gate drive, conduction losses stay manageable in the 4 A range.
What the key ratings mean for your BOM
1200 V drain-source rating (Vdss) puts this part firmly in the 800 V DC-bus class — think three-phase PFC stages, solar inverters with 1000 V DC input, or auxiliary flyback converters in industrial drives. Input capacitance (Ciss) is 182 pF at 800 V drain-source — this is the capacitance the driver sees during the Miller plateau. Low Ciss means the driver's peak current requirement is modest; a 1 A gate driver charges this capacitance in under 2 ns, enabling fast switching edges that reduce switching losses. The 175°C maximum junction allows the part to run hot in a sealed enclosure without derating the thermal design to a lower Tj limit.
Active production — no obsolescence risk for new designs
RoHS3 compliant. The CoolSiC™ series is Infineon's silicon-carbide MOSFET family, positioned for high-efficiency, high-voltage switching above the silicon super-junction ceiling.