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Infineon Technologies IMW120R060M1HXKSA1 — Discrete Semiconductors

Infineon IMW120R060M1HXKSA1 CoolSiC N-Ch SiCFET, 1200 V

MPNIMW120R060M1HXKSA1
End of Life

Infineon CoolSiC™ series, N-Channel SiCFET, 1200 V drain-source, 36 A continuous drain, 78 mOhm Rds(on) at 18 V gate drive, TO-247-3 through-hole package, -55 to 175 °C junction temperature.

$14.15Ref. price · indicative, final on quote
Infineon Technologies IMW120R060M1HXKSA1 datasheet (PDF)
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesCoolSiC™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IMW120R060M1HXKSA1 specifications
ParameterValue
SeriesCoolSiC™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)15V, 18V
Current - continuous drain (Id) @ 25°C36A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs+23V, -7V
TechnologySiCFET (Silicon Carbide)
CaseTO-247-3
Vgs(th) (Max) @ id5.7V @ 5.6mA
Rds on (Max) @ id, vgs78mOhm @ 13A, 18V
Gate charge (Qg) (Max) @ vgs31 nC @ 18 V
Input capacitance (Ciss) (Max) @ vds1060 pF @ 800 V

Product details

The Infineon IMW120R060M1HXKSA1 is a 1200 V, 36 A N-channel silicon carbide (SiC) FET from the CoolSiC™ series, in a TO-247-3 through-hole package. It is designed for high-efficiency power conversion in applications like switch-mode power supplies, solar inverters, EV charging stations, and industrial motor drives where the 1200 V blocking voltage and low on-resistance reduce conduction and switching losses compared to silicon super-junction MOSFETs. The 78 mOhm Rds(on) at 18 V gate drive and 31 nC gate charge mean the gate driver sees a light load, keeping switching losses manageable at moderate frequencies.

The TO-247-3 through-hole package with supplier device code PG-TO247-3-41 is a standard footprint for high-power through-hole devices. The three leads are gate, drain, and source — verify the pinout against your gate-driver layout before soldering.

For new designs, this part is a current-production choice with no near-term obsolescence risk. The CoolSiC™ series is Infineon's established SiC portfolio, so second-sourcing options are limited to other CoolSiC parts with similar Rds(on) and voltage class — the IPD50R950CEAUMA1 is a 500 V CoolMOS silicon MOSFET, not a functional replacement for a 1200 V SiC FET.

Frequently asked questions

What is the equivalent or alternative to IMW120R060M1HXKSA1?

The IPD50R950CEAUMA1 is a 500 V CoolMOS silicon MOSFET — it is not a functional equivalent for a 1200 V SiC FET. For a true alternative, look at other CoolSiC™ parts in the same voltage and Rds(on) class, such as the IMW120R060M1H (same die, different suffix).

How to drive IMW120R060M1HXKSA1 gate?

The recommended drive voltage range is 15 V to 18 V. The gate charge is 31 nC at 18 V, so a standard isolated gate driver with 2 A to 4 A peak output current will switch it effectively. The maximum gate-source voltage is +23 V and -7 V — stay within that window to avoid oxide damage.

Is IMW120R060M1HXKSA1 compatible with TO247-3 footprint?

Yes, the package is TO-247-3 with supplier device code PG-TO247-3-41. It fits the standard TO-247-3 footprint. Verify the pinout (gate, drain, source) against your PCB layout before assembly.