What this SiC FET is and where it fits
The Infineon IMW120R060M1HXKSA1 is a 1200 V, 36 A N-channel silicon carbide (SiC) FET from the CoolSiC™ series, in a TO-247-3 through-hole package. It is designed for high-efficiency power conversion in applications like switch-mode power supplies, solar inverters, EV charging stations, and industrial motor drives where the 1200 V blocking voltage and low on-resistance reduce conduction and switching losses compared to silicon super-junction MOSFETs. The 78 mOhm Rds(on) at 18 V gate drive and 31 nC gate charge mean the gate driver sees a light load, keeping switching losses manageable at moderate frequencies.
Package and mounting
The TO-247-3 through-hole package with supplier device code PG-TO247-3-41 is a standard footprint for high-power through-hole devices. The three leads are gate, drain, and source — verify the pinout against your gate-driver layout before soldering. The 150 W power dissipation at case temperature assumes a properly heatsinked case; the thermal pad on the back of the package is the drain tab, so the heatsink must be electrically isolated or the system must tolerate the drain potential on the heatsink.
Lifecycle and compliance
The IMW120R060M1HXKSA1 is listed as Active and ROHS3 compliant. No last-time-buy or end-of-life notice is on record. For new designs, this part is a current-production choice with no near-term obsolescence risk. The CoolSiC™ series is Infineon's established SiC portfolio, so second-sourcing options are limited to other CoolSiC parts with similar Rds(on) and voltage class — the IPD50R950CEAUMA1 is a 500 V CoolMOS silicon MOSFET, not a functional replacement for a 1200 V SiC FET.