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Infineon Technologies IMBG65R163M1HXTMA1
Infineon Technologies

Infineon IMBG65R163M1HXTMA1 CoolSIC™ M1 SiC MOSFET, 650 V

MPNIMBG65R163M1HXTMA1
End of Life

Infineon CoolSIC™ M1 SiCFET, N-Channel, 650 Vdss, 17 A continuous, 217 mOhm Rds(on) at 18 V, 10 nC gate charge, PG-TO263-7-12 package, -55 to 175 °C junction.

$6.07Ref. price · indicative, final on quote
IMBG65R163M1HXTMA1 datasheet
PackagingPG-TO263-7-12
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IMBG65R163M1HXTMA1 Technical Specifications
ParameterValue
SeriesCoolSIC™ M1
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)18V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation85W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+23V, -5V
TechnologySiCFET (Silicon Carbide)
Vgs(th) (Max) @ id5.7V @ 1.7mA
Rds on (Max) @ id, vgs217mOhm @ 5.7A, 18V
Gate charge (Qg) (Max) @ vgs10 nC @ 18 V
Input capacitance (Ciss) (Max) @ vds320 pF @ 400 V

Product details

SiC MOSFET for 400 V bus hard-switching and resonant stages

The IMBG65R163M1HXTMA1: The 217 mOhm maximum on-resistance at 18 V gate drive and 5.7 A sets the conduction loss baseline for a 400 V DC bus PFC or LLC converter stage.

Switching loss budget — gate charge and capacitance

Total gate charge is 10 nC at 18 V. Input capacitance measures 320 pF at 400 V drain-source bias.

Package and thermal path

The large exposed drain tab requires a soldered copper plane on the PCB for effective heat spreading — a two-layer board with minimal copper will bottleneck the thermal performance.

ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of IMBG65R163M1HXTMA1?

Maximum on-resistance is 217 mOhm at 5.7 A drain current with 18 V gate drive. The 18 V drive voltage is specified for achieving the lowest Rds(on); operating at lower gate voltages will increase the on-resistance above the rated maximum.

What package is IMBG65R163M1HXTMA1?

The supplier device package is PG-TO263-7-12, a surface-mount D²PAK variant with seven leads and an exposed drain tab.