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Infineon Technologies IMBG65R072M1HXTMA1

IMBG65R072M1HXTMA1 SiC MOSFET, 650 V, 72 mΩ, Active

MPNIMBG65R072M1HXTMA1
End of Life

Infineon IMBG65R072M1HXTMA1 silicon carbide N-channel MOSFET, 650 V, 72 mΩ Rds(on), PG-TO263 package, Tape & Reel, RoHS3 compliant, active product status.

$13.25Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IMBG65R072M1HXTMA1 Technical Specifications
ParameterValue
Series*
PackageTape & Reel (TR); Cut Tape (CT)

Product details

650 V, 72 mΩ SiC MOSFET in PG-TO263

The IMBG65R072M1HXTMA1 is a silicon carbide N-channel MOSFET from Infineon, housed in a PG-TO263 package. It is specified for high-voltage switching applications where low on-resistance and fast switching are critical.

Active lifecycle and compliance

It is ROHS3 Compliant, meeting the latest EU environmental directive for lead-free and restricted-substance materials.

Package and ordering options

Available in Tape & Reel (TR) for automated pick-and-place assembly, and Cut Tape (CT) for prototype and low-volume builds. The PG-TO263 package is a standard surface-mount D2PAK footprint with a large drain tab for thermal management.

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What are the equivalents or alternatives to IMBG65R072M1HXTMA1?

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Is IMBG65R072M1HXTMA1 obsolete or end-of-life?

Lifecycle status determines long-term availability and replacement planning.