650 V, 72 mΩ SiC MOSFET in PG-TO263
The IMBG65R072M1HXTMA1 is a silicon carbide N-channel MOSFET from Infineon, housed in a PG-TO263 package. It is specified for high-voltage switching applications where low on-resistance and fast switching are critical.
Active lifecycle and compliance
It is ROHS3 Compliant, meeting the latest EU environmental directive for lead-free and restricted-substance materials.
Package and ordering options
Available in Tape & Reel (TR) for automated pick-and-place assembly, and Cut Tape (CT) for prototype and low-volume builds. The PG-TO263 package is a standard surface-mount D2PAK footprint with a large drain tab for thermal management.
