Infineon IMBG65R072M1HXTMA1 silicon carbide N-channel MOSFET, 650 V, 72 mΩ Rds(on), PG-TO263 package, Tape & Reel, RoHS3 compliant, active product status.
| Parameter | Value |
|---|---|
| Series | * |
| Package | Tape & Reel (TR); Cut Tape (CT) |
The IMBG65R072M1HXTMA1 is a silicon carbide N-channel MOSFET from Infineon, housed in a PG-TO263 package. It is specified for high-voltage switching applications where low on-resistance and fast switching are critical.
The PG-TO263 package is a standard surface-mount D2PAK footprint with a large drain tab for thermal management.
Buyers need immediate sourcing options to complete their procurement.
Price drives purchase decisions and budget planning.
Stock availability affects lead time and production schedules.
Engineers need detailed electrical and mechanical data for design validation.
Sourcing flexibility requires known substitutes for BOM risk mitigation.
Lifecycle status determines long-term availability and replacement planning.