650 V SiC MOSFET with 74 mOhm Rds(on) — active production
The 74 mOhm maximum on-resistance at 16.7 A and 18 V gate drive sets the conduction loss floor for hard-switching topologies like totem-pole PFC or full-bridge DC-DC converters. Junction temperature range extends to 175 °C, giving thermal headroom over silicon MOSFETs that typically top out at 150 °C.
Gate charge and capacitance — switching frequency budget
Total gate charge is 28 nC at 18 V drive, and input capacitance measures 930 pF at 400 V drain-source. These numbers keep the gate drive power low — at 100 kHz switching, the average gate current is under 3 mA, so a standard isolated gate driver with 1 A peak output handles the turn-on and turn-off without excessive dissipation. The low Ciss also reduces the Miller plateau duration, which helps minimise switching losses in hard-switched bridges.
Package and thermal interface — PG-TO263-7-12
The part comes in a PG-TO263-7-12 surface-mount package — a D²Pak variant with 7 leads plus a large tab. Standard reflow profiles for lead-free solder apply; no special bake-out is required if the moisture sensitivity level is observed per the reel label.