IMBG65R030M1HXTMA1 - Infineon Technologies
MPNIMBG65R030M1HXTMA1
End of Life
SILICON CARBIDE MOSFET PG-TO263-
$16.38Ref. price · indicative, final on quote
PackagingPG-TO263-7-12
RoHSROHS3 Compliant
SeriesCoolSiC™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | CoolSiC™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 18V |
| Current - continuous drain (Id) @ 25°C | 63A (Tc) |
| Power dissipation | 234W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +23V, -5V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ id | 5.7V @ 8.8mA |
| Rds on (Max) @ id, vgs | 42mOhm @ 29.5A, 18V |
| Gate charge (Qg) (Max) @ vgs | 49 nC @ 18 V |
| Input capacitance (Ciss) (Max) @ vds | 1643 pF @ 400 V |