1700 V blocking with SiC switching performance
The IMBF170R450M1XTMA1: This 1700 V blocking capability places it well above the 600-650 V class of most silicon superjunction MOSFETs, suiting it for high-voltage DC links in solar inverters, EV charging infrastructure, and industrial power supplies where the bus voltage exceeds 1000 V.
450 mOhm Rds(on) and gate drive requirements
Maximum on-resistance is 450 mOhm at 2 A drain current with 15 V gate drive. The drive voltage range is specified for both 12 V and 15 V, with the lower Rds(on) achieved at 15 V. Gate charge totals 11 nC at 12 V, which keeps the drive power modest even at switching frequencies above 100 kHz — a 100 kHz hard-switched stage draws roughly 1.1 mA average from the gate driver, well within the capability of standard isolated gate-driver ICs. Input capacitance is 610 pF measured at 1000 V Vds, a figure that reflects the small die size enabled by SiC's high critical field.
Package and board-level integration
Housed in a PG-TO263-7-13 package (D²Pak with 7 leads plus tab), the device is surface-mount with the exposed drain tab soldered to the PCB copper pour for thermal management. The 7-lead configuration provides separate Kelvin-source connections for the gate drive return, reducing the common-source inductance that otherwise degrades switching speed. The package footprint is compatible with standard TO-263 (D²Pak) solder pads, though the 7-lead layout requires a matching land pattern. Gate-source voltage is limited to +20 V and -10 V absolute maximum.