TrenchStop 5 IGBT for 650 V power stages
The Infineon IKZA50N65SS5XKSA1 is a 650 V, 80 A Trench Field Stop IGBT from the TrenchStop™ 5 series, housed in a PG-TO247-4-3 through-hole package. It targets hard-switching applications such as motor drives, UPS inverters, solar string inverters, and welding converters where low conduction loss and controlled switching behaviour are required. The 650 V breakdown voltage provides margin for 400 V DC-link rails common in three-phase industrial drives.
Conduction and switching loss profile
At the test condition of 400 V bus, 50 A collector current, 9 Ω gate resistor, and 15 V gate drive, the device delivers a typical Vce(on) of 1.7 V. That on-state voltage sets the conduction loss at rated current — at 50 A, expect roughly 85 W conduction loss per device before switching losses are added. The switching energy totals 750 µJ per cycle (230 µJ turn-on, 520 µJ turn-off) under the same test condition. For a 20 kHz switching frequency, that adds about 15 W of switching loss, which together with conduction loss determines the heatsink requirement. The 110 nC gate charge is moderate for this current class; a standard IGBT driver with 2 A to 4 A peak source/sink capability will handle the turn-on and turn-off edges cleanly.
Thermal and ruggedness envelope
Maximum power dissipation is 274 W. The 200 A pulsed collector current rating (Icm) gives short-circuit withstand margin for desaturation protection circuits. The TO-247-4 package separates the Kelvin emitter from the power emitter, which reduces gate-loop inductance and improves switching behaviour compared to a standard TO-247-3 — the fourth pin is the Kelvin emitter connection, not a second collector. This matters for layout: the gate-driver return should route to the Kelvin pin, not the power emitter tab.
Lifecycle and supply position
This part is qualified for ongoing production and new design-ins.