1200 V, 150 A trench IGBT with Kelvin-emitter package
The Infineon IKY75N120CH3XKSA1 is a 1200 V, 150 A TRENCHSTOP IGBT in the 4-pin TO-247-4 (PG-TO247-4) package. The fourth pin is a Kelvin emitter connection that decouples the gate-drive loop from the main power loop, reducing the effective gate inductance and the miller plateau voltage — this directly lowers switching losses and lets you drive the gate harder without oscillation. It is rated for a maximum junction temperature of 175°C, giving extra thermal headroom in motor-drive and inverter designs where the heatsink is already sized for the worst-case ambient.
Switching and conduction loss at the test condition
At the test condition of 600 V bus, 75 A collector current, 6 Ohm gate resistor, and 15 V gate drive, the part switches 3.4 mJ on and 2.9 mJ off. The turn-on delay is 38 ns and turn-off delay is 303 ns at 25°C. The on-state voltage Vce(on) is 2.35 V typical at 15 V gate and 75 A. These numbers let you estimate the junction temperature rise in a hard-switched inverter at the nominal operating point — the 175°C Tj max means you can push the thermal design further than a 150°C-rated part.
Gate drive and pulsed current capability
Total gate charge is 370 nC — the driver must supply this at the switching frequency. The pulsed collector current rating is 300 A, useful for short-circuit withstand and inrush handling. The reverse recovery time of the co-packaged diode is 292 ns. The input type is standard (no logic-level threshold), so the gate drive needs to swing to 15 V for full saturation.
Active production — no LTB concern
It is RoHS3 compliant.