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Infineon Technologies IKY50N120CH3XKSA1
Infineon Technologies

Infineon IKY50N120CH3XKSA1 IGBT, 1200 V 100 A TO-247-4

MPNIKY50N120CH3XKSA1
End of Life

Infineon TrenchStop IGBT, IKY50N120CH3XKSA1, 1200 V, 100 A, Vce(on) 2.35 V at 15 V / 50 A, 235 nC gate charge, 652 W max power, TO-247-4 package, -40 to 175 °C junction.

$11.41Ref. price · indicative, final on quote
IKY50N120CH3XKSA1 datasheet
PackagingTO-247-4
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IKY50N120CH3XKSA1 Technical Specifications
ParameterValue
Input typeStandard
Mounting typeThrough Hole
Voltage - collector emitter breakdown1200 V
Current - collector (Ic)100 A
Current - collector pulsed200 A
Power - max652 W
Operating temperature-40°C ~ 175°C (TJ)
PackageTube
Gate charge235 nC
CaseTO-247-4
Test condition600V, 50A, 10Ohm, 15V
Switching energy2.3mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C32ns/296ns
Vce(on) (Max) @ vge, ic2.35V @ 15V, 50A
Reverse recovery time255 ns

Product details

1200 V / 100 A TrenchStop IGBT in a 4-pin TO-247

The Infineon IKY50N120CH3XKSA1 is a 1200 V, 100 A TrenchStop IGBT in a TO-247-4 package with a separate Kelvin-emitter connection for the gate return. This fourth pin decouples the gate-drive loop from the main power path, reducing the effective gate inductance and the turn-off voltage spike that can plague 3-pin TO-247 layouts. The part is built on Infineon's Trench Field Stop technology, which balances a low saturation voltage of 2.35 V at 15 V gate drive and 50 A collector current against a fast switching profile — 32 ns turn-on delay and 296 ns turn-off delay at 25 °C under the test condition of 600 V, 50 A, 10 Ohm gate resistor.

Switching losses and thermal headroom at 175 °C

The switching energy at 600 V, 50 A is 2.3 mJ on and 1.9 mJ off, which together with the 255 ns reverse recovery time of the co-packaged diode sets the practical switching frequency ceiling. At 20 kHz switching, the total switching loss alone approaches 84 W before adding conduction loss — the 652 W maximum power dissipation in the TO-247-4 package provides substantial headroom, but the junction-to-case thermal resistance must be managed with a proper heatsink.

Active lifecycle and ROHS3 compliance

It is ROHS3 compliant. The part ships in a Tube, through-hole TO-247-4 package (PG-TO247-4).

Frequently asked questions

Can IKY50N120CH3XKSA1 handle 100 A continuous?

Yes, the continuous collector current rating is 100 A (Ic max), with a pulsed current capability of 200 A. However, the actual continuous current in a real design is limited by the junction temperature — at 100 A and 2.35 V Vce(on), the conduction loss alone is 235 W, so a substantial heatsink and forced airflow are required to stay within the 175 °C Tj(max) limit.

Is IKY50N120CH3XKSA1 a direct replacement for IKY50N120CH3?

The suffix XKSA1 indicates the specific tube-packaged variant in the TO-247-4 package. The IKY50N120CH3 base part number shares the same die and ratings — 1200 V, 100 A, 2.35 V Vce(on). The XKSA1 suffix is the Infineon ordering code for the tube quantity and packaging format. For pin-compatible fit, confirm the package code matches your PCB footprint (PG-TO247-4).

What is the Vce(on) of IKY50N120CH3XKSA1?

The typical collector-emitter saturation voltage is 2.35 V at a gate-emitter voltage of 15 V and a collector current of 50 A. This is the on-state voltage used for conduction loss calculations.