1200 V / 80 A TrenchStop IGBT in a 4-pin TO-247
The Infineon IKY40N120CH3XKSA1 is a 1200 V, 80 A TrenchStop IGBT in a TO-247-4 package. The fourth pin is a Kelvin-emitter connection that separates the gate-drive return from the main power current path, which reduces the effective gate-loop inductance and lets the device switch cleaner at higher di/dt. Maximum junction temperature is 175 °C.
Switching loss and gate drive budget
At 600 V, 40 A, 12 Ω, 15 V, turn-on energy is 2.18 mJ and turn-off energy is 1.3 mJ. Gate charge is 190 nC. Turn-on delay is 30 ns and turn-off delay is 280 ns at 25 °C, giving a usable dead-time window for the complementary switch in a half-bridge leg.
Package and mounting — the Kelvin-emitter advantage
The PG-TO247-4 package is a through-hole device with a separate emitter sense pin. In a standard 3-pin TO-247 the gate-drive loop includes the power emitter inductance; here the drive loop is isolated from the main current commutation, which reduces the voltage spike seen at the gate during switching transients. The collector-emitter saturation voltage is 2.35 V typical at 15 V gate drive and 40 A, which sets the conduction loss floor for the on-state. Pulsed collector current capability is 160 A, useful for short-circuit withstand and inrush events.
Lifecycle and compliance
ROHS3 compliance is listed.