650 V, 80 A TrenchStop™ 5 IGBT in TO-247-3
The Infineon IKW50N65RH5XKSA1 is a TrenchStop™ 5 trench field-stop IGBT rated for 650 V collector-emitter breakdown and 80 A continuous collector current, with a 200 A pulsed current capability. Packaged in a through-hole TO-247-3 (PG-TO247-3), it handles up to 305 W of power dissipation and operates across a -40°C to 175°C junction temperature range. This generation of TrenchStop™ is designed for hard-switching topologies in industrial motor drives, UPS systems, and welding equipment where low conduction and switching losses are the priority.
Switching performance and test conditions
Characterised under standard test conditions of 400 V, 25 A, 12 Ω gate resistance, and 15 V gate drive, the part delivers 230 µJ turn-on energy and 180 µJ turn-off energy. Gate charge is 120 nC. Turn-on delay at 25°C is 22 ns; turn-off delay is 180 ns. These figures give a design team a reliable baseline for loss budgeting in a 15–25 kHz hard-switched inverter stage.
On-state voltage and drive conditions
Collector-emitter saturation voltage is 2.1 V maximum at 15 V gate drive and 50 A collector current. That 2.1 V ceiling at half the rated current is the number to use for worst-case conduction loss estimates in the thermal model.
Lifecycle and compliance
For dual-source planning, the TO-247-3 footprint is shared across several Infineon 650 V TrenchStop™ IGBTs, but no pin-compatible second source from another manufacturer is listed in the official cross-reference.