1200 V / 75 A TrenchStop IGBT in TO-247-3
The Infineon IKW40T120FKSA1 is a 1200 V, 75 A NPT Trench Field Stop IGBT from the TrenchStop series, housed in a PG-TO247-3-1 through-hole package. It targets hard-switching applications such as motor drives, UPS inverters, and welding converters where the 1200 V collector-emitter breakdown voltage provides margin for 400 VAC to 690 VAC bus rails, and the 75 A continuous collector current supports 10–30 kW output stages with appropriate heatsinking.
Conduction and switching losses at the operating point
At the test condition of 600 V, 40 A, 15 Ω gate resistor, and 15 V gate drive, the typical Vce(on) is 2.3 V — this on-state voltage sets the conduction loss floor. For a 40 A rms phase current, the conduction loss per device is roughly 92 W, which must be sunk by the heatsink. The total switching energy per cycle is 6.5 mJ; at a 10 kHz switching frequency that adds 65 W of dynamic loss, pushing the junction toward the 270 W power-max ceiling. The 240 ns reverse recovery time on the co-packaged diode is fast enough for most IGBT switching speeds but should be verified against the diode's own recovery losses in the target topology.
Temperature range and thermal design
The operating junction temperature range is -40 to 150 °C. The 150 °C maximum junction is typical for TrenchStop IGBTs and allows a reasonable thermal headroom above the 125 °C limit of older planar devices. The turn-on delay is 48 ns and turn-off delay is 480 ns at 25 °C; the turn-off tail is the dominant switching loss contributor at higher junction temperatures. Gate charge is 203 nC — a standard 15 V gate driver with 2 A peak source/sink can charge and discharge the gate in under 100 ns, keeping switching edges clean.