650 V / 85 A TrenchStop™ 5 — the switching-loss trade-off
The Infineon IKW30N65EL5XKSA1 is a 650 V, 85 A discrete IGBT from the TrenchStop™ 5 family, housed in a PG-TO247-3 through-hole package. It integrates a fast-recovery diode with a 100 ns trr, making it a candidate for hard-switching topologies like PFC, welding inverters, and motor drives where the diode's recovery characteristic directly affects turn-on loss and ringing.
Vce(on) is 1.35 V typical at 15 V gate drive and 30 A collector current — this is the conduction loss floor at that operating point. At 85 A continuous, the actual Vce(on) will be higher due to the output characteristic slope; budget the conduction loss using the typical curve in the datasheet, not the single-point value. Switching energy is specified at 400 V, 30 A, 10 Ω gate resistor, 15 V gate drive: 470 µJ turn-on and 1.35 mJ turn-off. The turn-off figure dominates the total switching loss at moderate frequencies; a lower gate resistor reduces turn-off energy at the cost of increased turn-on di/dt and EMI. Total gate charge is 168 nC.
175 °C junction — headroom for overload cycles
The 175 °C maximum allows the IGBT to handle short-duration overloads.