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Infineon Technologies IKW30N60TFKSA1

Infineon IKW30N60TFKSA1 IGBT, 600 V 60 A TrenchStop TO-247-3

MPNIKW30N60TFKSA1
End of Life

Infineon TrenchStop IGBT, 600 V, 60 A, Trench Field Stop, Vce(on) 2.05 V @ 15 V, 30 A, 167 nC gate charge, 1.46 mJ switching energy, -40°C to 175°C Tj, PG-TO247-3-1 package, Through Hole, ROHS3 compliant.

$4.74Ref. price · indicative, final on quote
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

IKW30N60TFKSA1 Technical Specifications
ParameterValue
SeriesTrenchStop®
IGBT typeTrench Field Stop
Input typeStandard
Mounting typeThrough Hole
Voltage - collector emitter breakdown600 V
Current - collector (Ic)60 A
Current - collector pulsed90 A
Power - max187 W
Operating temperature-40°C ~ 175°C (TJ)
PackageTube
Gate charge167 nC
CaseTO-247-3
Test condition400V, 30A, 10.6Ohm, 15V
Switching energy1.46mJ
Td (on/off) @ 25°C23ns/254ns
Vce(on) (Max) @ vge, ic2.05V @ 15V, 30A
Reverse recovery time143 ns

Product details

600 V, 60 A TrenchStop IGBT for motor-drive and inverter stages

The Infineon IKW30N60TFKSA1 is a TrenchStop field-stop IGBT in a TO-247-3 through-hole package, rated for 600 V collector-emitter breakdown and 60 A continuous collector current. It targets the main switching element in motor drives, UPS inverters, welding machines, and industrial power supplies where a 400 V to 600 V DC bus is the norm.

Conduction and switching losses — sizing the thermal budget

At the test condition of 400 V bus, 30 A collector, 15 V gate drive, and a 10.6 Ω gate resistor, the typical Vce(sat) is 2.05 V — this sets the on-state conduction loss at 61.5 W for a 100 % duty cycle at 30 A. The total switching energy per cycle is 1.46 mJ, which at a 20 kHz switching frequency adds 29.2 W of switching loss. Combined with the 187 W maximum power dissipation, the designer must verify the junction temperature stays within the -40°C to 175°C range under worst-case load. The 167 nC total gate charge tells the gate-driver designer the average drive current needed: at 20 kHz, a 167 nC gate charge requires 3.3 mA average from the driver; at 40 kHz, 6.7 mA. The turn-on delay is 23 ns and turn-off delay 254 ns at 25°C, with the turn-off tail dominating the switching loss.

Package and mounting — TO-247-3 through-hole

The IKW30N60TFKSA1 ships in the PG-TO247-3-1 package, a standard three-lead TO-247 outline with a 0.110-inch (2.8 mm) centre pin pitch. The through-hole mounting requires a drilled PCB with plated holes; the large tab provides a low-thermal-resistance path to the heatsink. The package is supplied in tube form.

Lifecycle and compliance — active production, ROHS3

It is ROHS3 compliant, meeting the current EU restriction on hazardous substances.

Frequently asked questions

What is the Vce(sat) of IKW30N60TFKSA1?

The typical Vce(sat) is 2.05 V at 15 V gate drive and 30 A collector current, measured at a 400 V bus with a 10.6 Ω gate resistor.

Is IKW30N60TFKSA1 RoHS compliant?

Yes, the IKW30N60TFKSA1 is ROHS3 compliant.

What is the closest functional equivalent to IKW30N60TFKSA1?

The Infineon IHW30N120R5XKSA1 is a TrenchStop IGBT in the same TO-247-3 package, but it is rated for 1200 V collector-emitter breakdown and 60 A switching current, with a 1.85 V Vce(sat) at 15 V, 30 A. It is not a pin-compatible drop-in due to the higher voltage rating and different gate charge (235 nC).