The Infineon IKW03N120H is an NPT (non-punch-through) IGBT with a monolithic anti-parallel diode, rated for 1200 V collector-emitter breakdown and 9.6 A continuous collector current. This is a standard-speed, hard-switching IGBT aimed at motor drives, UPS, and power-factor-correction stages where 1200 V blocking is non-negotiable.
The test condition (800 V, 3 A, 82 Ω gate resistor, 15 V gate drive) yields a turn-on energy of 140 µJ and turn-off energy of 150 µJ. At a 20 kHz switching frequency, that's about 5.8 W total switching loss before you add conduction loss. The 2.8 V Vce(on) at 15 V, 3 A sets the conduction loss floor — at rated current and 50 % duty, that's about 1.4 W per device. The 42 ns reverse recovery time of the co-packaged diode is fast enough for hard-switched bridge legs at moderate frequencies, but the diode's own recovery losses add to the total dissipation. If you're pushing toward 40 kHz or above, a SiC diode in parallel may be worth the board space.
Package, mounting, and thermal reality
The through-hole leads take a soldering iron or wave solder; no special reflow profile needed.